The Ohio State University Corporate Engagement Office

Back to All Technologies

Substrates for vertical power devices

Engineering & Physical Sciences
Electronics & Photonics
MEMS & Nanotechnology
Photonics/Optics
Semiconductors, Circuits, & Electronic Components
Materials/Chemicals
Other
College
College of Engineering (COE)
Researchers
Zhao, Hongping
Bhuiyan, A F M Anhar Uddin
Meng, Lingyu
Licensing Manager
Randhawa, Davinder
614-247-7709
randhawa.40@osu.edu
External Links

T2023-152

The Need

In today's fast-paced technological landscape, there is an ever-growing demand for high-performance vertical power devices with enhanced breakdown voltage capabilities, exceeding 20 kV. Meeting this commercial need requires an innovative approach to semiconductor drift layer development, one that not only ensures the highest quality but also accelerates growth rates and enhances surface morphology. To address this imperative, we introduce MOCVD epitaxial technology, a groundbreaking solution that unlocks the potential for next-generation power devices.

The Technology

Our MOCVD epitaxial technology represents a significant leap forward in semiconductor manufacturing. It enables the deposition of high-quality, thick semiconductor drift layers on substrates with unprecedented speed and precision. This breakthrough method optimizes the epitaxial growth process, resulting in superior surface morphology and the potential to achieve breakthrough voltage ratings exceeding 20 kV.

Commercial Applications

  • High-Voltage Power Electronics: This technology is ideal for the development of next-gen vertical power devices, making it indispensable in applications such as electric vehicle drivetrains and renewable energy systems.
  • Power Grid Infrastructure: Enhancing power distribution and management by enabling the creation of high-voltage components for grid reliability and efficiency.
  • Industrial Automation: Facilitating the creation of high-power modules for industrial automation, ensuring robust and efficient operation.

Benefits/Advantages

  • Breakthrough Voltage: Achieve breakdown voltage ratings above 20 kV, setting new standards for high-performance vertical power devices.
  • Faster Production: Dramatically reduce production time with accelerated growth rates, enhancing overall manufacturing efficiency.
  • Enhanced Surface Quality: Improved surface morphology ensures superior device performance and reliability.
  • Energy Efficiency: Enable the development of more efficient power electronics, reducing energy consumption and environmental impact.
  • Market Competitiveness: Stay ahead of the competition with cutting-edge technology, positioning your company as an industry leader.