The Need

Unlike traditional light bulbs, Light Emitting Diodes (LEDs) use less power, last longer, and contain no environmentally harmful substances. However, LEDs struggle with technical errors, such as lattice mismatch and large resistances. As adoption increases, it is necessary to develop LEDs that are reliable and efficient and maintain the long lasting and environmentally efficient qualities seen in early products.

The Technology

Researchers at The Ohio State University, led by Dr. Siddharth Rajan, have developed a novel Gallium III-Nitride nanowire for LEDs that uses nanoscale epitaxy and compositional grading in polar semiconductors. This is done through grading carrying from GaN to AlN and then from AlN to GaN, which leads to a high charge density. The invention can be applied in the IR, visible, and UV range.

Commercial Applications

• LED manufacturing
• LED lighting
• Materials engineering

Benefits/Advantages

• Nanoscale epitaxy overcomes effect formation during epitaxial growth
• Higher charge density results in lower resistance and better efficiency
• Hole doping using polarization-doping
• Applicable in IR, visible, and UV range

Patent Protection

• United States Patent No. 9,478,699