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Heat Flux Sensors Using Re4Si7 in a Transverse Thermoelectric Device Configuration

Engineering & Physical Sciences
Electronics & Photonics
Semiconductors, Circuits, & Electronic Components
Sensors & Controls
Materials/Chemicals
Other
College
College of Arts & Sciences
Researchers
Goldberger, Joshua
Heremans, Joseph
Windl, Wolfgang
Licensing Manager
Zinn, Ryan
614-292-5212
zinn.7@osu.edu

T2025-098

Technology Summary

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1. Unmet Need

Current heat flux sensors rely on indirect temperature gradient measurements across thick materials, resulting in slow response times and limited sensitivity. There is a growing demand for compact, fast, and highly sensitive heat flux sensors for applications in thermal management, aerospace, and industrial process monitoring. Existing technologies struggle to combine high sensitivity with rapid response and thermal stability across wide temperature ranges.

2. Technology Overview

This technology utilizes the transverse thermoelectric properties of Re₄Si₇ to directly measure heat flux. A temperature gradient applied across the thickness of the material generates a voltage perpendicular to the gradient, enabling fast and sensitive detection. Re₄Si₇ exhibits an exceptionally large and stable thermopower anisotropy, making it ideal for thin-film sensor configurations that deliver high signal-to-noise ratios and rapid thermal response.

3. Potential Applications

  • Real-time thermal monitoring in aerospace and automotive systems
  • Industrial process control and safety diagnostics
  • Thermal mapping in electronics and semiconductor devices
  • Energy-efficient building and HVAC system diagnostics

4. Key Advantages

  • 20× higher sensitivity than current state-of-the-art materials
  • Fast response times (microseconds to nanoseconds) due to thin-film design
  • High thermal stability with a melting point of 2000 °C
  • Simplified calibration enabled by stable thermopower across wide temperature ranges