The Need
Despite near-perfect external quantum efficiency in blue InGaN LEDs, devices emitting green, amber, and longer visible wavelengths remain inefficient. This is due to internal electric fields and charge separation in conventional quantum wells, which worsen with higher indium content and wider wells. The resulting poor electron-hole overlap suppresses radiative efficiency, limiting performance in applications requiring longer-wavelength emission.

The Technology
This technology, developed by OSU engineers, introduces a novel quantum well structure for III-nitride LEDs, incorporating a thin layer of ZnSnGaN₂ (or related II-IV-nitride alloys) within InGaN quantum wells. Strategic placement and composition tuning of this layer dramatically enhance electron-hole wavefunction overlap, confining holes near the quantum well center and enabling efficient radiative recombination. The approach leverages advanced pulsed MOCVD growth for high-quality, droplet-free films and sharp interfaces.

Commercial Applications
• High-efficiency green, amber, and red LEDs for solid-state lighting
• Semiconductor lasers for displays and optical communications
• Photovoltaic devices and solar cells
• Photodetectors for imaging and sensing

Benefits/Advantages
• Enables high internal quantum efficiency at longer wavelengths using low indium content, reducing efficiency droop and material challenges
• Up to 14–25× enhancement in radiative recombination rates compared to conventional designs
• Greater flexibility in emission wavelength tuning via quantum well engineering
• Compatible with scalable MOCVD manufacturing and existing III-nitride device architectures