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Topological Surface State-Based Thermal Switch

Engineering & Physical Sciences
Electronics & Photonics
Semiconductors, Circuits, & Electronic Components
Materials/Chemicals
Nanomaterials
College
College of Engineering (COE)
Researchers
Heremans, Joseph
Kang, Joon Sang
kim, Min Young
Licensing Manager
Zinn, Ryan
614-292-5212
zinn.7@osu.edu

T2025-217

The Need
Efficient heat switches are crucial for various applications, including solid-state refrigeration, solar thermal installations, waste heat scavenging, and electronics cooling. Current technologies often suffer from irreversible thermodynamic losses or inefficiencies, limiting their effectiveness. This novel technology addresses the need for more efficient, temperature- and electric-field-tuned heat switches.

The Technology
Bi1-xSbx alloys (0.086 ≤ x ≤ 0.15), developed by OSU researchers, function as topological insulators with tunable surface states. These alloys exhibit temperature- and electric-field-driven phase transitions, enabling precise control of surface thermal conductance. Experimental studies confirm significant changes in conductance at specific Sb concentrations and temperatures, revealing a promising mechanism for future heat switch designs after further optimization.

Commercial Applications
Solid-state refrigeration systems: Achieve higher efficiency and lower energy consumption without harmful refrigerants.
Solar thermal installations: Optimize heat transfer for better performance and increased energy output.
Waste heat scavenging systems: Improve efficiency in capturing and utilizing industrial waste heat.
Cooling solutions for electronic devices: Provide efficient, precise thermal management for high-performance electronics.

Benefits/Advantages
• Electrically-activated switching enables fast response times.
• Enhanced efficiency.
• Improved thermodynamic efficiency in solar thermal systems.
• Increased temperature difference for waste heat recovery systems.
• Rapid transient cooling for electronics without increasing overall cooling demand.